Epitaxial growth on porous GaAs substrates - ScienceDirect
Mikroskopie 2011
TNT2012 Abstract Book by Phantoms Foundation - Issuu
High-resolution synchrotron diffraction study of porous buffer InP(001) layers
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PDF) Laser assisted electrochemical preparation of micro and nanopores in Ga x In 1− x P
PDF) Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
PDF) Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
PDF) Lattice-Mismatched Epitaxial Growth On Porous III-V Substrates
D. NOHAVICA | The Czech Academy of Sciences, Prague | AVCR | Research profile
PDF) Quick measurement of crystal truncation rod in multi-wavelength dispersive mode
electronic reprint High-resolution synchrotron diffraction study of porous buffer InP(001) layers
Epitaxial growth on porous GaAs substrates - ScienceDirect
Mikroskopie 2011
Jan GRYM | Team leader. Synthesis and Characterization of Nanomaterials. | Ph.D. | The Czech Academy of Sciences, Prague | AVCR | Institute of Photonics and Electronics | Research profile
DEVELOPMENT OF MATERIALS SCIENCE IN RESEARCH AND EDUCATION
Jiri PANGRAC | The Czech Academy of Sciences, Prague | AVCR | semico | Research profile
Why is the Czech Republic anti-Russia? - Quora
Environmental risk of nanomaterials and nanoparticles and EPR technique as an effective tool to study them—a review | SpringerLink
prof. Ing. Eduard Hulicius, CSc. – Publications | FZU
Nanomaterials: Pros and Contras
NANOTECHNOLOGIES IN THE CZECH REPUBLIC 2008
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Workshop of Experimental Nuclear and Particle Physics 2020
PDF) Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents
